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2SK3408

更新时间： 2024-11-24 22:02:11
品牌 Logo 应用领域
日电电子 - NEC 晶体开关小信号场效应晶体管
页数 文件大小 规格书
8页 64K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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2SK3408 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SC-96, MINI MOLD PACKAGE-3Reach Compliance Code：compliant
风险等级：5.73Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：43 V
最大漏极电流 (ID)：1 A最大漏源导通电阻：0.26 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3408 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3408  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK3408 is a switching device which can be driven  
directly by a 4-V power source.  
+0.1  
–0.05  
0.4  
+0.1  
–0.06  
0.16  
The 2SK3408 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of dynamic clamp of relay and so on.  
3
0 to 0.1  
FEATURES  
1
2
• Can be driven by a 4-V power source  
• Low on-state resistance  
0.65  
0.95 0.95  
1.9  
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)  
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)  
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)  
• Built-in G-S protection diode against ESD.  
0.9 to 1.1  
2.9 ±0.2  
1
: Gate  
2 : Source  
3 : Drain  
ORDERING INFORMATION  
PART NUMBER  
2SK3408  
PACKAGE  
EQUIVALENT CIRCUIT  
SC-96 Mini Mold (Thin Type)  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
Drain to Source Voltage (VGS = 0 V)  
Drain to Gate Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VDGS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
43±5  
43±5  
±20  
V
V
Gate  
V
Gate  
Protection  
Diode  
Drain Current (DC) (T  
C
= 25°C)  
±1.0  
±4.0  
0.2  
A
Source  
Drain Current (pulse) Note1  
Total Power Dissipation (T  
Total Power Dissipation (T  
Channel Temperature  
A
Marking: XF  
C
A
= 25°C)  
= 25°C) Note2  
W
W
°C  
PT2  
1.25  
150  
Tch  
Storage Temperature  
Tstg  
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 Board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D15016EJ3V0DS00 (3rd edition)  
The mark ★ shows major revised points.  
2000  
©
12345678

中文翻译

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