Datasheet > 2SK3390

2SK3390

更新时间： 2024-11-20 22:52:59

品牌	Logo	应用领域
日立 - HITACHI		放大器功率放大器
页数	文件大小	规格书
7页	80K
描述
Silicon N Channel MOS FET UHF Power Amplifier

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2SK3390 数据手册

2SK3390

Silicon N Channel MOS FET

UHF Power Amplifier

ADE-208-846 (Z)

1st. Edition

Aug.2001

Features

•

High power output, High gain, High efficiency

PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz)

Compact package capable of surface mounting

Outline

RP8P

1. Gate

2. Source

3. Drain

Note:

Marking is “IX”.

This Device is sensitive to Electro Static Discharge.

An Adequate handling procedure is requested.

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK3390IXTB-E	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, RP8P, 2 PIN
2SK3391	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK3391_07	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK3391JX	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK3391JXTL-E	RENESAS	获取价格	Silicon N-Channel MOS FET UHF Power Amplifier
2SK3396	PANASONIC	获取价格	Silicon N-Channel Junction FET
2SK3397	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
2SK3397_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applic
2SK3397_09	TOSHIBA	获取价格	Relay Drive and DC-DC Converter Applications
2SK3398	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications and Motor Drive Applications