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2SK3391JXTL-E

更新时间： 2024-02-24 01:58:01

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
10页	150K
描述
Silicon N-Channel MOS FET UHF Power Amplifier

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数据手册

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2SK3391JXTL-E 数据手册

2SK3391

Silicon N-Channel MOS FET

UHF Power Amplifier

REJ03G0209-0300

Rev.3.00

Nov 08, 2007

Features

•

High power output, High gain, High efficiency

PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz)

Compact package capable of surface mounting

•

Outline

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK ^R

)

1. Gate

2. Source

3. Drain

4. Source

2, 4

Note: Marking is “JX”.

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

Ratings

Unit

±10

V_GSS

I_D

0.3

Drain peak current

I_D(pulse) ^Note1

Pch ^Note2

Tch

0.75

Channel dissipation

°C

Channel temperature

Storage temperature

Notes: 1. PW < 1sec, Tch < 150°C

2. Value at Tc = 25°C

150

Tstg

–45 to +150

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.

REJ03G0209-0300 Rev.3.00 Nov 08, 2007

Page 1 of 9

12 3 4 5 6 7...10

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