2SK3018W

更新时间： 2024-02-13 03:41:00

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	706K
描述
N-Channel POWER MOSFET

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数据手册

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2SK3018W 数据手册

2SK3018W

TYPICAL ELECTRICAL CHARACTERISTICS

1.5

0.15

0.1

0.05

200m

100m

=3V

^DS=3V

_D=0.1mA

Pulsed

Ta=25°C

50m

Pulsed

3.5V

20m

10m

2.5V

Ta=125°C

75°C

25°C

−25°C

0.5

0.5m

0.2m

0.1m

^GS=1.5V

−50 −25

75 100 125 150

CHANNEL TEMPERATURE : Tch (°C

)

DRAIN-SOURCE VOLTAGE : V^DS(V)

GATE-SOURCE VOLTAGE : V (V)

Fig.1 Typical output characteristics

Fig.3 Gate threshold voltage vs.

channel temperature

Fig.2 Typical transfer characteristics

^GS=4V

Pulsed

=2.5V

Ta=25°C

Pulsed

Ta=125°C

Pulsed

75°C

25°C

Ta=125°C

75°C

25°C

- 25°C

−25°C

=0.1A

=0.05A

0.5

0.001 0.002

0.5

0.001 0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0.005

0.01

0.02

0.05

0.1

0.2

0.5

DRAIN CURRENT : I

(A)

DRAIN CURRENT : ID (A)

GATE-SOURCE VOLTAGE : V^GS(V)

Fig.5 Static drain-source on-state

Fig.4 Static drain-source on-state

Fig.6 Static drain-source

on-state resistance vs.

gate-source voltage

resistance vs. drain current (ΙΙ)

resistance vs. drain current (Ι)

VGS=4V

^DS=3V

^GS=0V

Pulsed

100m

50m

0.2

Ta=−25°C

25°C

I =100mA

0.1

20m

75°C

125°C

Ta=125°C

0.05

10m

I =50mA

75°C

25°C

−25°C

0.02

0.01

0.005

0.5m

0.002

0.001

0.2m

0.1m

0.0001 0.0002

0.0005 0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

−50 −25

75 100 125 150

0.5

1.5

DRAIN CURRENT : I (A)

CHANNEL TEMPERATURE : Tch (°C)

SOURCE-DRAIN VOLTAGE : V^SD(V)

Fig.8 Forward transfer

Fig.7 Static drain-source on-state

resistance vs. channel

temperature

Fig.9 Reverse drain current vs.

admittance vs. drain current

source-drain voltage (Ι)

WEITRON

http://www.weitron.com.tw

3/5

30-Oct-09

1 234 5

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