是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
零件包装代码: | TO-220AB | 包装说明: | SC-46, TO-220AB, 3 PIN |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 173 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 45 A |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | TIN COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK2931 | RENESAS |
功能相似 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2931 | HITACHI |
功能相似 |
Silicon N Channel MOS FET High Speed Power Switching |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2932 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2932 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2932-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2933 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2933 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2933-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2934 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2934 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2934-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2935 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |