生命周期: | Transferred | 零件包装代码: | TO-252 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.13 |
Is Samacsys: | N | 最大漏源导通电阻: | 0.04 Ω |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK2912L-E | RENESAS |
功能相似 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2912L | RENESAS |
功能相似 |
Silicon N Channel MOS FET High Speed Power Switching |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2912(L)|2SK2912(S) | ETC |
获取价格 |
||
2SK2912(S) | RENESAS |
获取价格 |
0.04ohm, POWER, FET, LDPAK-3 | |
2SK2912(S)-(2) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK2912(S)TL | RENESAS |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK2912(S)TR | HITACHI |
获取价格 |
40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK2912L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2912L | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2912L-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2912S | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK2912S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |