Datasheet > 2SK2912(S)

2SK2912(S)

更新时间： 2024-09-28 20:22:11

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2SK2912(S) 技术参数

2SK2912(L), 2SK2912(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1038-0200

(Previous: ADE-208-495A)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance

R_DS= 15 mΩ typ.

•

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

(Package name: LDPAK(L))

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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型号	品牌	替代类型	描述	数据表
2SK2912S	RENESAS	功能相似	Silicon N Channel MOS FET High Speed Power Switching

型号	品牌	获取价格	描述	数据表
2SK2912(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2912(S)TL	RENESAS	获取价格	Power Field-Effect Transistor, 40A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
2SK2912(S)TR	HITACHI	获取价格	40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2912L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2912L	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2912L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2912S	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2912S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2912S-E	RENESAS	获取价格	40A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2912STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching