生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2912(S)TR | HITACHI |
获取价格 |
40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK2912L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912L | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912L-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912S | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912S-E | RENESAS |
获取价格 |
40A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 |
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2SK2912STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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2SK2912STR-E | RENESAS |
获取价格 |
Nch Single Power MOSFET 60V 40A 20mohm LDPAK(S)-(1)/TO-263 |
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2SK2914 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
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