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2SK2914_09 PDF预览

2SK2914_09

更新时间: 2024-01-25 09:35:08
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器驱动DC-DC转换器
页数 文件大小 规格书
6页 404K
描述
Chopper Regulator, DC−DC Converter and Moter Drive Applications

2SK2914_09 数据手册

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2SK2914  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2914  
Chopper Regulator, DCDC Converter and Moter Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 0.42 (typ.)  
DS (ON)  
: |Y | = 7.5 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 250 V)  
DSS  
DS  
z Enhancement mode  
: V = 1.5 to 3.5 V (V  
= 10 V, I = 1 mA)  
DS D  
th  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
250  
250  
±20  
7.5  
30  
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
DP  
Drain power dissipation (Tc = 25°C)  
P
20  
W
D
AS  
AR  
JEDEC  
JEITA  
TO-220AB  
Single pulse avalanche energy  
E
110  
mJ  
SC-46  
(Note 2)  
TOSHIBA  
2-10P1B  
Avalanche current  
I
7.5  
2
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
Weight: 2.0 g (typ.)  
AR  
T
ch  
150  
Storage temperature range  
T
–55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
6.25  
83.3  
°C / W  
°C / W  
th (chc)  
R
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 3.3 mH, R = 25 , I = 7.5 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  

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