生命周期: | Obsolete | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.3 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 490 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 70 A |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.0097 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
最大脉冲漏极电流 (IDM): | 280 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2826-S-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2826-Z | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SMD, 3 PIN | |
2SK2826-Z-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2826-Z-E1-AZ | RENESAS |
获取价格 |
2SK2826-Z-E1-AZ | |
2SK2826-ZJ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2826-ZJ | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | |
2SK2826-ZJ-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2827-01 | FUJI |
获取价格 |
Power MOSFET | |
2SK2828 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK283 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SOT-23 |