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2SK2826-Z-AZ PDF预览

2SK2826-Z-AZ

更新时间: 2024-09-24 13:04:27
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日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 76K
描述
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220SMD, 3 PIN

2SK2826-Z-AZ 技术参数

生命周期:Transferred零件包装代码:TO-220
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
雪崩能效等级(Eas):490 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):70 A最大漏源导通电阻:0.0097 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):280 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2826-Z-AZ 数据手册

 浏览型号2SK2826-Z-AZ的Datasheet PDF文件第2页浏览型号2SK2826-Z-AZ的Datasheet PDF文件第3页浏览型号2SK2826-Z-AZ的Datasheet PDF文件第4页浏览型号2SK2826-Z-AZ的Datasheet PDF文件第5页浏览型号2SK2826-Z-AZ的Datasheet PDF文件第6页浏览型号2SK2826-Z-AZ的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2826  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK2826  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK2826-S  
FEATURES  
Super Low On-State Resistance  
2SK2826-ZJ  
TO-263  
DS(on)1  
GS  
D
R
R
= 6.5 m(MAX.) (V = 10 V, I = 35 A)  
DS(on)2  
GS  
D
= 9.7 m(MAX.) (V = 4.0 V, I = 35 A)  
iss  
iss  
Low C : C = 7200 pF (TYP.)  
Built-in Gate Protection Diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
V
Drain to Source Voltage (V = 0 V)  
60  
V
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
V
±20  
+20, –10  
±70  
V
V
DS  
GSS(DC)  
Gate to Source Voltage (V = 0 V)  
D(DC)  
I
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±280  
A
C
T
Total Power Dissipation (T = 25°C)  
P
100  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to + 150  
70  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
490  
mJ  
Notes 1. PW 10 µ s, Duty cycle 1 %  
2. Starting Tch = 25 °C, R = 25 Ω, V = 20 V 0 V  
A
GS  
THERMAL RESISTANCE  
th  
Channel to Case  
R (ch-C)  
1.25  
83.3  
°C/W  
°C/W  
th  
Channel to Ambient  
R (ch-A)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 1999 NS CP(K)  
Printed in Japan  
D11273EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1998  
©

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