是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 70 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2826-ZJ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2826-ZJ | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | |
2SK2826-ZJ-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2827-01 | FUJI |
获取价格 |
Power MOSFET | |
2SK2828 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK283 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SOT-23 | |
2SK2830 | HITACHI |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK2832-01 | FUJI |
获取价格 |
Power MOSFET | |
2SK2832-01R | FUJI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.02ohm, N-Channel, Silicon, Metal-oxide Sem | |
2SK2833 | FUJI |
获取价格 |
Power MOSFET |