生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 120 V |
最大漏极电流 (Abs) (ID): | 50 A | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2834 | FUJI |
获取价格 |
Power MOSFET | |
2SK2834-01 | FUJI |
获取价格 |
Power MOSFET | |
2SK2834-01P | FUJI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK2835 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK2835(TP) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-251VAR | |
2SK2835(TP,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-251VAR | |
2SK2835(TP,Q) | TOSHIBA |
获取价格 |
2SK2835(TP,Q) | |
2SK2835_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic | |
2SK2835_09 | TOSHIBA |
获取价格 |
Chopper Regulator, DC−DC Converter and Motor Drive | |
2SK2836 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |