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2SK2835(TP) PDF预览

2SK2835(TP)

更新时间: 2024-11-19 13:04:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动DC-DC转换器
页数 文件大小 规格书
6页 664K
描述
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-251VAR

2SK2835(TP) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.3 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

2SK2835(TP) 数据手册

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2SK2835  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2835  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 0.56 (typ.)  
DS (ON)  
: |Y | = 4.5 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 200 V)  
DSS  
DS  
z Enhancement mode : V = 1.5~3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±20  
5
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
20  
DP  
Drain power dissipation  
P
1.3  
W
D
AS  
AR  
Single pulse avalanche energy  
(Note 2)  
E
65  
mJ  
JEDEC  
JEITA  
Avalanche current  
I
5
0.13  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
2-8M1B  
T
ch  
150  
Weight: 0.54 g (typ.)  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
96.1  
Unit  
Thermal resistance, channel to  
ambient  
R
°C / W  
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 4.2 mH, R = 25 , I = 5 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-21  

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