Datasheet > 2SK2733_06

2SK2733_06

更新时间： 2024-11-15 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	706K
描述
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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2SK2733_06 数据手册

2SK2733

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2733

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 8.0 Ω (typ.)

DS (ON)

: |Y | = 0.9 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 720 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

TO-220AB

324

(Note 2)

SC-46

Avalanche current

6.0

TOSHIBA

2-10P1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Weight: 2.0 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

2.08

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 594 mH, R = 25 Ω, I

= 1 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-10

12 3 4 5 6

中文翻译

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与2SK2733_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2733_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive
2SK2734	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2734	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 20A I(D) \| TO-251VAR
2SK2735(L)\|2SJ2735(S)	ETC	获取价格
2SK2735(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 20A I(D) \| TO-252VAR
2SK2735(S)TL	HITACHI	获取价格	暂无描述
2SK2735(S)TL	RENESAS	获取价格	20A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET

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