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2SK2735S PDF预览

2SK2735S

更新时间: 2024-11-05 12:53:23
品牌 Logo 应用领域
TYSEMI 晶体驱动器栅极开关晶体管脉冲栅极驱动
页数 文件大小 规格书
1页 94K
描述
4V gate drive device can be driven from 5V source High speed switching

2SK2735S 数据手册

  
IC  
Product specification  
2SK2735S  
Features  
TO-252  
Unit: mm  
Low on-resistance  
RDS = 20 m typ.  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
High speed switching  
4V gate drive device can be driven from 5V source  
0.127  
max  
+0.1  
0.80  
-0.1  
+0.1  
0.60  
-0.1  
2.3  
4.60  
1 Gate  
+0.15  
-0.15  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
30  
Gate to source voltage  
V
20  
20  
80  
A
Drain current  
Idp *  
PD  
A
Power dissipation  
20  
W
Channel temperature  
Storage temperature  
* PW 10 s,Duty Cycle 1%  
Tch  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VDSS  
IDSS  
IGSS  
Testconditons  
ID=10mA,VGS=0V  
Min  
30  
Typ  
Max  
10  
Unit  
V
Drain source breakdown voltage  
Drain cut-off current  
VDS=30V,VGS=0  
A
Gate leakage current  
VGS= 16V,VDS=0  
10  
2.0  
A
Gate to source cutoff voltage  
Forward transfer admittance  
VGS(off) VDS=10V,ID=1mA  
1.0  
8
V
S
VDS=10V,ID=10A  
VGS=10V,ID=10A  
VGS=4V,ID=10A  
16  
20  
Yfs  
28  
50  
m
Drain to source on-state resistance  
RDS(on)  
35  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
tr  
750  
520  
210  
16  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
225  
85  
ID=10A,VGS(on)=10V,RL=1  
Turn-off delay time  
Fall time  
toff  
tf  
90  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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