2SK2735(S)TR

更新时间： 2024-11-15 13:04:27

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2SK2735(S)TR 数据手册

2SK2735(L), 2SK2735(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-543

1st. Edition

Features

•

Low on-resistance

R_DS= 20 mΩ typ.

•

High speed switching

4V gate drive device can be driven from 5V source

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK2735L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735L	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735S	TYSEMI	获取价格	4V gate drive device can be driven from 5V source High speed switching
2SK2735S	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735S	KEXIN	获取价格	Silicon N-Channel MOSFET
2SK2735STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2735STR-E	RENESAS	获取价格	Nch Single Power MOSFET 30V 20A 28mohm DPAK(S)/TO-252
2SK2736	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching