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2SK2733(Q) PDF预览

2SK2733(Q)

更新时间: 2024-02-09 19:00:32
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东芝 - TOSHIBA 晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动DC-DC转换器局域网
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2SK2733(Q) 数据手册

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2SK2733  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)  
2SK2733  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 8.0 (typ.)  
DS (ON)  
: |Y | = 0.9 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 720 V)  
DSS  
DS  
: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
1
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
D
Drain current  
A
I
3
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
60  
W
D
AS  
AR  
JEDEC  
JEITA  
TO-220AB  
E
324  
mJ  
(Note 2)  
SC-46  
Avalanche current  
I
1
6.0  
A
TOSHIBA  
2-10P1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Weight: 2.0 g (typ.)  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
2.08  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 594 mH, R = 25 , I  
V
DD  
= 1 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-10  

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