2SK2662(T)

更新时间： 2024-11-15 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体驱动器转换器继电器晶体管功率场效应晶体管开关脉冲电机 DC-DC转换器局域网
页数	文件大小	规格书
6页	865K
描述
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,5A I(D),TO-220AB

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中文翻译

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技术参数
数据手册

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2SK2662(T) 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	35 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

2SK2662(T) 数据手册

2SK2662

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2662

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.35 Ω (typ.)

DS (ON)

: |Y | = 4.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

180

(Note 2)

SC-67

2-10R1B

Avalanche current

3.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

3.57

62.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 12.2 mH, R = 25 Ω, I

= 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-02

12 3 4 5 6

中文翻译

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与2SK2662(T)相关器件

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2SK2662_06	TOSHIBA	获取价格	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2662T	TOSHIBA	获取价格	DCâDC Converter, Relay Drive and Motor Driv
2SK2663	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 1A)
2SK2664	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 3A)
2SK2665	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 3A)
2SK2666	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 3A)
2SK2667	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 3A)
2SK2668	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 3A)
2SK2669	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 5A)
2SK2670	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(900V 5A)

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