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2SK2668 PDF预览

2SK2668

更新时间: 2024-11-14 22:52:55
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 431K
描述
HVX-2 Series Power MOSFET(900V 3A)

2SK2668 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):48 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:4.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0湿度敏感等级:2
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:N-CHANNEL功耗环境最大值:40 W
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):230 ns
最大开启时间(吨):70 nsBase Number Matches:1

2SK2668 数据手册

 浏览型号2SK2668的Datasheet PDF文件第2页浏览型号2SK2668的Datasheet PDF文件第3页浏览型号2SK2668的Datasheet PDF文件第4页浏览型号2SK2668的Datasheet PDF文件第5页浏览型号2SK2668的Datasheet PDF文件第6页浏览型号2SK2668的Datasheet PDF文件第7页 
SHINDENGEN  
HVX-2 Series Power MOSFET  
N-Channel Enhancement type  
OUTLINE DIMENSIONS  
2SK2668  
Case : ITO-3P  
(Unit : mm)  
( FP3W90HVX2 )  
900V 3A  
FEATURES  
Input capacitance (Ciss) is small.  
Especially, input capacitance  
at 0 biass is small.  
The static Rds(on) is small.  
The switching time is fast.  
Avalanche resistance guaranteed.  
APPLICATION  
Switching power supply of AC 240V input  
High voltage power supply  
Inverter  
RATINGS  
Absolute Maximum Ratings Tc = 25℃)  
Item  
Symbol  
Tstg  
Tch  
VDSS  
VGSS  
ID  
Conditions  
Ratings  
Unit  
Storage Temperature  
-55~150  
Channel Temperature  
150  
900  
±30  
3
6
3
40  
3
48  
4.8  
2
Drain-Source Voltage  
V
A
Gate-Source Voltage  
Continuous Drain CurrentDC)  
Continuous Drain CurrentPeak)  
Continuous Source CurrentDC)  
Total Power Dissipation  
Repetitive Avalanche Current  
Single Avalanche Energy  
Repetitive Avalanche Energy  
Dielectric Strength  
IDP  
IS  
PT  
Pulse width≦10μs, Duty cycle≦1/100  
W
A
mJ  
IAR  
Tch = 150℃  
EAS  
EAR  
Vdis  
Tch = 25℃  
Tch = 25℃  
Terminals to case,AC 1 minute  
kV  
Mounting Torque  
TOR Recommended torque 0.5 Nm )  
0.8  
Nm  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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