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2SK2480 PDF预览

2SK2480

更新时间: 2024-02-24 16:37:43
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 118K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2480 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.45其他特性:AVALANCHE RATED
雪崩能效等级(Eas):37.1 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (ID):3 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

2SK2480 数据手册

 浏览型号2SK2480的Datasheet PDF文件第2页浏览型号2SK2480的Datasheet PDF文件第3页浏览型号2SK2480的Datasheet PDF文件第4页浏览型号2SK2480的Datasheet PDF文件第5页浏览型号2SK2480的Datasheet PDF文件第6页浏览型号2SK2480的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2480  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
(in millimeter)  
The 2SK2480 is N-Channel MOS Field Effect Transistor designed  
for high voltage switching applications.  
FEATURES  
Low On-Resistance  
RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A)  
10.0 0.ꢀ  
4.5 0.ꢁ  
ꢀ.ꢁ 0.ꢁ  
ꢁ.7 0.ꢁ  
Low Ciss  
Ciss = 900 pF TYP.  
High Avalanche Capability Ratings  
Isolated TO-220 Package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
900  
±30  
±3.0  
±12  
35  
V
V
Gate to Source Voltage  
Drain Current (DC)  
A
Drain Current (pulse)*  
A
0.7 0.1  
ꢁ.54  
1.ꢀ 0.ꢁ  
ꢁ.5 0.1  
0.65 0.1  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
1.5 0.ꢁ  
ꢁ.54  
PT2  
2.0  
Tch  
150  
1. Gate  
ꢁ. Drain  
ꢀ. Source  
Storage Temperature  
Tstg –55 to +150 ˚C  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
3.0  
A
EAS  
37.1  
mJ  
1 ꢁ ꢀ  
*
PW 10 µs, Duty Cycle 1 %  
MP-45F (ISOLATED TO-220)  
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0  
Drain  
Body  
Diode  
Gate  
Source  
Document No. D10272EJ1V0DS00 (1st edition)  
Date Published August 1995  
Printed in Japan  
P
1995  
©

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