是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.35 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 264 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 1.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2488 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2488-A | NEC |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK2489 | SHINDENGEN |
获取价格 |
VZ Series Power MOSFET(180V 10A) | |
2SK249 | NJSEMI |
获取价格 |
Trans RF MOSFET N-CH 20V 0.03A 3-Pin 2-4E1D | |
2SK2490 | SHINDENGEN |
获取价格 |
VZ Series Power MOSFET(180V 10A) | |
2SK2491 | SHINDENGEN |
获取价格 |
VZ Series Power MOSFET(180V 20A) | |
2SK2492 | SHINDENGEN |
获取价格 |
VZ Series Power MOSFET(180V 20A) | |
2SK2493 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, AND DC-DC CONVE | |
2SK2493(2-7B1B) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 16 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 | |
2SK2493(2-7B2B) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 16 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Pu |