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2SK2487 PDF预览

2SK2487

更新时间: 2024-02-13 22:49:02
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 119K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2487 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.35其他特性:AVALANCHE RATED
雪崩能效等级(Eas):264 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (ID):8 A最大漏源导通电阻:1.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2487 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2487  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2487 is N-Channel MOS Field Effect Transistor designed  
for high voltage switching applications.  
(in millimeter)  
FEATURES  
Low On-Resistance  
RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A)  
4.7 MAX.  
1.5  
15.7 MAX. 3.ꢀ 0.ꢀ  
4
Low Ciss  
Ciss = 2 100 pF TYP.  
High Avalanche Capability Ratings  
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
VDSS  
VGSS  
ID (DC)  
ID (pulse)  
PT1  
900  
±30  
±8.0  
±20  
140  
3.0  
V
V
ꢀ.ꢀ 0.ꢀ  
1.0 0.ꢀ  
0.6 0.1  
ꢀ.8 0.1  
Drain Current (DC)  
A
5.45  
5.45  
1. Gate  
ꢀ. Drain  
3. Source  
Drain Current (pulse)*  
A
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Channel Temperature  
W
W
˚C  
PT2  
4. Fin (Drain)  
Tch  
150  
MP-88  
Storage Temperature  
Tstg –55 to +150 ˚C  
Drain  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
8.0  
A
EAS  
264  
mJ  
*
PW 10 µs, Duty Cycle 1 %  
Body  
Diode  
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0  
Gate  
Source  
Document No. D10283EJ1V0DS00 (1st edition)  
Date Published August 1995  
Printed in Japan  
P
1995  
©

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