Datasheet > 2SK2484

2SK2484

更新时间： 2024-11-17 06:23:15

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管开关脉冲局域网
页数	文件大小	规格书
2页	44K
描述
MOS Field Effect Transistors

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中文翻译

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数据手册

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2SK2484 数据手册

SMD Type

TransistIoCrs

MOS Field Effect Transistors

2SK2484

TO-263

Unit: mm

+0.2

4.57

-0.2

Features

+0.1

1.27

-0.1

Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A)

Low Ciss Ciss=1200pF TYP

High Avalanche Capability Ratings

+0.1

1.27

-0.1

0.1max

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

900

Unit

Gate to Source Voltage

V^GSS

Drain Current(DC)

ID(DS)

Drain Current(pulse) *1

I^D(pulse)

1.5

Total Power Dissipation Ta = 25

Total Power Dissipation T^C= 25

Channel Temperature

P^T

Tch

Tstg

IAS

150

Storage temperature

-55 to +150

Single Avalanche Current *2

Single Avalanche Energy *2

*1. PW 10ìs,Dduty cycle 1%.

*2.Starting Tch=25 ,RG=25Ù,VGS=20V

E^AS

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