2SK2482-A

更新时间： 2024-02-28 02:44:03

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中文翻译

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数据手册

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2SK2482-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2482

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2482 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

(in m illim eter)

FEATURES

4.7 MAX.

1.5

15.7 MAX. 3.2±0.2

•

Low On-Resistance

R^{DS (on)}= 4.0 Ω (VGS = 10 V, ID = 3.0 A)

•

Low Ciss

Ciss = 900 pF TYP.

High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

VDSS

VGSS

I^{D (DC)}

ID (pulse)

PT1

900

±30

±5.0

±12

100

3.0

Gate to Source Voltage

2.2±0.2

1.0±0.2

0.6±0.1

2.8±0.1

Drain Current (DC)

5.45

1. Gate

Drain Current (pulse)*

2. Drain

3. Source

4. Fin (Drain)

Total Power Dissipation (Tc = 25 ˚C)

Total Power Dissipation (T^A= 25 ˚C)

Channel Tem perature

˚C

PT2

Tch

150

MP-88

Storage Tem perature

Tstg –55 to +150 ˚C

Drain

Single Avalanche Current**

Single Avalanche Energy**

I^AS

5.0

EAS

73.5

m J

PW ≤ 10 µs, Duty Cycle ≤ 1 %

Body

Diode

** Starting T^ch= 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Gate

Source

Document No. D10274EJ1V0DS00 (1st edition)

Date Published August 1995 P

Printed in Japan

1995

12 3 4 5 6 7 8

中文翻译

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