Datasheet > 2SK2483

2SK2483

更新时间： 2024-09-26 22:52:55

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页数	文件大小	规格书
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描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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数据手册

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2SK2483 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2483

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

(in millimeter)

The 2SK2483 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

10.0±0.3

4.5±0.2

3.2±0.2

• Low On-Resistance

2.7±0.2

R^{DS (on)}= 2.8 Ω (VGS = 10 V, ID = 2.0 A)

• Low Ciss

Ciss = 1 200 pF TYP.

• High Avalanche Capability Ratings

• Isolated TO-220 Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

VDSS

V^GSS

ID(DC)

ID(pulse)

PT1

900

±30

±3.5

±10.5

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)*

0.7±0.1

2.54

1.3±0.2

2.5±0.1

Total Power Dissipation (T^c= 25 ˚C)

Total Power Dissipation (TA = 25 ˚C)

Channel Temperature

˚C

1.5±0.2

2.54

0.65±0.1

PT2

2.0

Tch

150

1. Gate

2. Drain

3. Source

Storage Temperature

T^stg–55 to +150 ˚C

Single Avalanche Current**

Single Avalanche Energy**

IAS

3.5

EAS

147

2 3

PW ≤ 10 µs, Duty Cycle ≤ 1 %

MP-45F (ISOLATED TO-220)

** Starting Tch = 25 ˚C, R G = 25 Ω, VGS = 20 V → 0

Drain

Body

Diode

Gate

Source

Document No. D10275EJ1V0DS00 (1st edition)

Date Published September 1995

Printed in Japan

1995

12 3 4 5 6 7 8

中文翻译

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与2SK2483相关器件

型号	品牌	获取价格	描述	数据表
2SK2484	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2484	KEXIN	获取价格	MOS Field Effect Transistors
2SK2484	TYSEMI	获取价格	Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) High Avalanche Capability Rating
2SK2484-AZ	NEC	获取价格	Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal
2SK2485	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2486	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2487	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2488	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2488-A	NEC	获取价格	Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Meta
2SK2489	SHINDENGEN	获取价格	VZ Series Power MOSFET(180V 10A)