2SK2486

更新时间： 2024-02-01 00:41:04

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
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描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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数据手册

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2SK2486 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2486

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2486 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

(in millimeter)

FEATURES

• Low On-Resistance

R^{DS (on)}= 2.0 Ω (VGS = 10 V, ID = 4.0 A)

4.7 MAX.

1.5

15.7 MAX. 3.ꢀ 0.ꢀ

• Low Ciss

Ciss = 1 830 pF TYP.

• High Avalanche Capability Ratings

ꢀ

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

VDSS

VGSS

I^{D (DC)}

ID (pulse)

PT1

900

±30

±7.0

±18

120

3.0

ꢀ.ꢀ 0.ꢀ

1.0 0.ꢀ

0.6 0.1

ꢀ.8 0.1

Drain Current (DC)

5.45

1. Gate

ꢀ. Drain

3. Source

Drain Current (pulse)*

Total Power Dissipation (Tc = 25 ˚C)

Total Power Dissipation (TA = 25 ˚C)

Channel Temperature

˚C

PT2

4. Fin (Drain)

T^ch

150

MP-88

Storage Temperature

Tstg –55 to +150 ˚C

Drain

Single Avalanche Current**

Single Avalanche Energy**

IAS

7.0

E^AS

144.1

PW ≤ 10 µs, Duty Cycle ≤ 1 %

Body

Diode

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

Gate

Source

Document No. D10282EJ1V0DS00 (1st edition)

Date Published August 1995

Printed in Japan

1995

12 3 4 5 6 7 8

中文翻译

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2SK2487	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2488	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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