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2SK2415-Z-AZ PDF预览

2SK2415-Z-AZ

更新时间: 2024-02-17 14:33:52
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 86K
描述
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, MP-3Z, TO-252, 3 PIN

2SK2415-Z-AZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AB包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.44外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2415-Z-AZ 数据手册

 浏览型号2SK2415-Z-AZ的Datasheet PDF文件第2页浏览型号2SK2415-Z-AZ的Datasheet PDF文件第3页浏览型号2SK2415-Z-AZ的Datasheet PDF文件第4页浏览型号2SK2415-Z-AZ的Datasheet PDF文件第5页浏览型号2SK2415-Z-AZ的Datasheet PDF文件第6页浏览型号2SK2415-Z-AZ的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2415, 2SK2415-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2415 is N-Channel MOS Field Effect Transistor designed  
for high voltage switching applications.  
(in millimeters)  
2.3 ± 0.2  
0.5 ± 0.1  
6.5 ± 0.2  
5.0 ± 0.2  
4
FEATURES  
Low On-Resistance  
RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A)  
1
2 3  
RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)  
Low Ciss  
Ciss = 570 pF TYP.  
1.3 MAX.  
QUALITY GRADE  
0.6 ± 0.1  
0.6 ± 0.1  
2.3 2.3  
Standard  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
Please refer to "Quality grade on NEC Semiconductor Devices" (Document  
number IEI-1209) published by NEC Corporation to know the  
specification of quality grade on the devices and its recommended applica-  
TO-251 (MP-3)  
tions.  
6.5 ± 0.2  
5.0 ± 0.2  
2.3 ± 0.2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
0.5 ± 0.1  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±8.0  
±32  
20  
V
V
4
A
1 2  
3
Drain Current (pulse)*  
A
0.9 0.8  
1.3 MAX.  
MAX. MAX.  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (Ta = 25 ˚C)  
Channel Temperature  
W
W
°C  
2.32.3  
0.8  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150 °C  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
8.0  
6.4  
A
TO-252 (MP-3Z)  
EAS  
mJ  
Drain  
*
PW 10 µs, Duty Cycle 1 %  
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0  
Body  
Diode  
Gate  
Gate Protection  
Diode  
Source  
The information in this document is subject to change without notice.  
Document No. D13207EJ1V1DS00 (1st edition)  
(Previous No. TC-2496)  
Date Published December 1997 N CP(K)  
Printed in Japan  
©
1994  

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