生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.65 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 0.03 A |
最大漏极电流 (ID): | 0.03 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.05 pF | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK241-OTPE4 | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
2SK241TPE4 | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
2SK241Y | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | TO-92VAR | |
2SK241-Y | TOSHIBA |
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暂无描述 | |
2SK241-YTPE4 | TOSHIBA |
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TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | |
2SK242 | SANYO |
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High-Frequency, General-Purpose Amp Applications | |
2SK2420 | SANKEN |
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MOSFET | |
2SK2420_05 | SANKEN |
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MOSFET | |
2SK2421 | SANKEN |
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MOSFET | |
2SK2422 | HITACHI |
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Silicon N-Channel MOS FET |