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2SK241-O PDF预览

2SK241-O

更新时间: 2024-11-13 19:47:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
7页 205K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-4E1D, 3 PIN, FET RF Small Signal

2SK241-O 技术参数

生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.65配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.03 A
最大漏极电流 (ID):0.03 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):0.05 pF最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK241-O 数据手册

 浏览型号2SK241-O的Datasheet PDF文件第2页浏览型号2SK241-O的Datasheet PDF文件第3页浏览型号2SK241-O的Datasheet PDF文件第4页浏览型号2SK241-O的Datasheet PDF文件第5页浏览型号2SK241-O的Datasheet PDF文件第6页浏览型号2SK241-O的Datasheet PDF文件第7页 
                                                        
                                                        
                                                                     
                                                                     
2SK241  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK241  
FM Tuner, VHF and RF Amplifier Applications  
Unit: mm  
·
·
·
·
Low reverse transfer capacitance: C = 0.035 pF (typ.)  
rss  
Low noise figure: NF = 1.7dB (typ.)  
High power gain: G = 28dB (typ.)  
PS  
Recommend operation voltage: 5~15 V  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gate-source voltage  
Drain current  
V
V
20  
±5  
V
V
DS  
GS  
I
30  
mA  
mW  
°C  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
200  
D
T
125  
ch  
T
-55~125  
stg  
JEDEC  
JEITA  
TOSHIBA  
2-4E1D  
Weight: 0.13 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
= 0, V = ±5 V  
GS  
¾
20  
1.5  
¾
¾
¾
¾
¾
¾
¾
¾
±50  
¾
nA  
V
GSS  
DS  
GS  
DS  
DS  
DS  
Drain-source voltage  
Drain current  
V
= -4 V, I = 100 mA  
D
DSX  
I
= 10 V, V  
= 0  
(Note)  
¾
14  
mA  
V
DSS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
= 10 V, I = 100 mA  
¾
-2.5  
¾
GS (OFF)  
D
ïY ï  
fs  
= 10 V, V  
= 0, f = 1 kHz  
10  
3.0  
mS  
pF  
pF  
dB  
dB  
GS  
C
¾
iss  
rss  
V
= 10 V, V  
= 0, f = 1 MHz  
DS  
GS  
Reverse transfer capacitance  
Power gain  
C
0.035 0.050  
G
28  
¾
ps  
V
= 10 V, V  
= 0,  
DS  
GS  
f = 100 MHz (Figure 1)  
Noise figure  
NF  
1.7  
3.0  
Note: I  
classification O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0  
DSS  
1
2003-03-27  

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