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2SK2424 PDF预览

2SK2424

更新时间: 2024-11-12 21:55:31
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
2页 16K
描述
High speed power switching

2SK2424 数据手册

 浏览型号2SK2424的Datasheet PDF文件第2页 
2SK2424  
Silicon N Channel MOS FET  
Application  
TO–220CFM  
High speed power switching  
Features  
• Low on–resistance  
• High speed switching  
• Low drive current  
• No Secondary Breakdown  
• Suitable for Switching regulator, DC – DC  
converter  
2
1
2
3
1
1. Gate  
2. Drain  
3. Source  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
450  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±30  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
8
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
32  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
8
A
DR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
35  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
** Value at Tc = 25 °C  
*

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