Datasheet > 2SK2415-Z-E2

2SK2415-Z-E2

更新时间： 2024-02-16 03:31:53

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	81K
描述
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3Z, SC-63, 3 PIN

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2SK2415-Z-E2 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK2415-Z-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2415, 2SK2415-Z

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2415 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

(in millimeters)

2.3 ± 0.2

0.5 ± 0.1

6.5 ± 0.2

5.0 ± 0.2

FEATURES

• Low On-Resistance

R^DS(on)1= 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)

2 3

R^DS(on)2= 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)

• Low Ciss

Ciss = 570 pF TYP.

1.3 MAX.

QUALITY GRADE

0.6 ± 0.1

2.3 2.3

Standard

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Please refer to "Quality grade on NEC Semiconductor Devices" (Document

number IEI-1209) published by NEC Corporation to know the

specification of quality grade on the devices and its recommended applica-

TO-251 (MP-3)

tions.

6.5 ± 0.2

5.0 ± 0.2

2.3 ± 0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

0.5 ± 0.1

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

V^GSS

I^D(DC)

ID(pulse)

PT1

±20

±8.0

±32

1 2

Drain Current (pulse)*

0.9 0.8

1.3 MAX.

MAX. MAX.

Total Power Dissipation (T^c= 25 ˚C)

Total Power Dissipation (T^a= 25 ˚C)

Channel Temperature

°C

2.32.3

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

PT2

1.0

Tch

150

Storage Temperature

T^stg

–55 to +150 °C

Single Avalanche Current**

Single Avalanche Energy**

IAS

8.0

6.4

TO-252 (MP-3Z)

EAS

Drain

PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

Body

Diode

Gate

Gate Protection

Diode

Source

The information in this document is subject to change without notice.

Document No. D13207EJ1V1DS00 (1st edition)

(Previous No. TC-2496)

Date Published December 1997 N CP(K)

Printed in Japan

1994

12 3 4 5 6 7 8

中文翻译

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