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2SK2128 PDF预览

2SK2128

更新时间: 2024-11-17 22:52:51
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松下 - PANASONIC /
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3页 48K
描述
Silicon N-Channel Power F-MOS FET

2SK2128 数据手册

 浏览型号2SK2128的Datasheet PDF文件第2页浏览型号2SK2128的Datasheet PDF文件第3页 
Power F-MOS FETs  
2SK2128  
Silicon N-Channel Power F-MOS FET  
Features  
Avalanche energy capacity guaranteed: EAS > 15mJ  
unit: mm  
VGSS = ±20V guaranteed  
High-speed switching: tf = 35ns  
No secondary breakdown  
4.6±0.2  
9.9±0.3  
2.9±0.2  
φ3.2±0.1  
Applications  
Contactless relay  
Diving circuit for a solenoid  
Driving circuit for a motor  
Control equipment  
2.6±0.1  
1.2±0.15  
0.7±0.1  
1.45±0.15  
Switching power supply  
0.75±0.1  
2.54±0.2  
5.08±0.4  
Absolute Maximum Ratings (TC = 25°C)  
Parameter  
Symbol  
Ratings  
Unit  
V
1
2 3  
7
Drain to Source breakdown voltage VDSS  
800  
1: Gate  
2: Drain  
3: Source  
Gate to Source voltage  
DC  
Pulse  
Avalanche energy capacity  
VGSS  
ID  
±30  
V
±2  
A
Drain current  
TO-220E Package  
IDP  
±4  
A
EAS*  
15  
mJ  
Allowable power  
dissipation  
TC = 25°C  
Ta = 25°C  
40  
PD  
W
2
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
*
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse  
Electrical Characteristics (TC = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
Unit  
mA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
V
DS = 640V, VGS = 0  
0.1  
±1  
IGSS  
VGS = ±30V, VDS = 0  
ID = 1mA, VGS = 0  
VDS = 25V, ID = 1mA  
VGS = 10V, ID = 1A  
VDS = 25V, ID = 1A  
IDR = 2A, VGS = 0  
Drain to Source breakdown voltage VDSS  
800  
2
Gate threshold voltage  
Vth  
5
7
V
Drain to Source ON-resistance  
Forward transfer admittance  
Diode forward voltage  
RDS(on)  
| Yfs |  
VDSF  
4.8  
1.1  
0.7  
S
1.3  
V
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
350  
60  
25  
15  
20  
25  
60  
pF  
pF  
pF  
ns  
VDS = 20V, VGS = 0, f = 1MHz  
Turn-on time (delay time)  
Rise time  
td(on)  
tr  
VGS = 10V, ID = 1A  
ns  
Fall time  
tf  
VDD = 200V, RL = 200Ω  
ns  
Turn-off time (delay time)  
Thermal resistance between channel and case  
td(off)  
Rth(ch-c)  
ns  
3.125  
°C/W  
1

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