Datasheet > 2SK2128

2SK2128

更新时间： 2024-11-08 22:52:51

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松下 - PANASONIC		/
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描述
Silicon N-Channel Power F-MOS FET

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中文翻译

获取价格

数据手册

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2SK2128 数据手册

Power F-MOS FETs

2SK2128

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed: EAS > 15mJ

unit: mm

● V_GSS= ±20V guaranteed

● High-speed switching: t_f= 35ns

● No secondary breakdown

4.6±0.2

9.9±0.3

2.9±0.2

φ3.2±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

2.6±0.1

1.2±0.15

0.7±0.1

1.45±0.15

● Switching power supply

0.75±0.1

2.54±0.2

5.08±0.4

■ Absolute Maximum Ratings (T_C= 25°C)

Parameter

Symbol

Ratings

Unit

2 3

Drain to Source breakdown voltage V_DSS

800

1: Gate

2: Drain

3: Source

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

±2

Drain current

TO-220E Package

I_DP

±4

EAS^*

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 5mH, I_L= 2.45A, V_DD= 50V, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

_DS= 640V, V_GS= 0

0.1

±1

I_GSS

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 1A

V_DS= 25V, I_D= 1A

I_DR= 2A, V_GS= 0

Drain to Source breakdown voltage V_DSS

800

Gate threshold voltage

V_th

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

R_DS(on)

| Y_fs|

V_DSF

4.8

1.1

Ω

0.7

−1.3

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

350

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time (delay time)

Rise time

t_d(on)

t_r

V_GS= 10V, I_D= 1A

Fall time

t_f

V_DD= 200V, R_L= 200Ω

Turn-off time (delay time)

Thermal resistance between channel and case

t_d(off)

R_th(ch-c)

3.125

°C/W

12 3

中文翻译

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