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2SK211-GR PDF预览

2SK211-GR

更新时间： 2024-09-23 21:21:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 715K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, 2-3F1C, S-MINI, SC-59, 3 PIN, FET RF Small Signal

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中文翻译

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2SK211-GR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：SOT-23
包装说明：2-3F1C, S-MINI, SC-59, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.16
其他特性：LOW NOISE配置：SINGLE
FET 技术：JUNCTION最大反馈电容 (Crss)：0.15 pF
最高频带：VERY HIGH FREQUENCY BANDJEDEC-95代码：TO-236
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK211-GR 数据手册

 浏览型号2SK211-GR的Datasheet PDF文件第2页浏览型号2SK211-GR的Datasheet PDF文件第3页浏览型号2SK211-GR的Datasheet PDF文件第4页浏览型号2SK211-GR的Datasheet PDF文件第5页浏览型号2SK211-GR的Datasheet PDF文件第6页 
2SK211  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK211  
FM Tuner Applications  
VHF Band Amplifier Applications  
Unit: mm  
•
•
•
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)  
High forward transfer admitance: |Y | = 9 mS (typ.)  
fs  
Extremely low reverse transfer capacitance: C = 0.1 pF (typ.)  
rss  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−18  
10  
V
GDO  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
150  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
SC-59  
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Marking  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= −0.5 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
⎯
⎯
⎯
−10  
nA  
V
GSS  
GS  
= −100 μA  
DS  
Gate-drain breakdown voltage  
V
I
−18  
⎯
(BR) GDO  
G
I
DSS  
(Note)  
Drain current  
V
= 0 V, V = 10 V  
DS  
1.0  
⎯
10  
mA  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
V
= 10 V, I = 1 μA  
−0.4  
⎯
⎯
9
−4.0  
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
GS  
DS  
GD  
DD  
DD  
D
= 0 V, V = 10 V, f = 1 kHz  
DS  
mS  
pF  
pF  
dB  
dB  
fs  
C
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
⎯
6.0  
⎯
⎯
iss  
rss  
PS  
Reverse transfer capacitance  
Power gain  
C
G
= −10 V, f = 1 MHz  
⎯
0.15  
⎯
= 10 V, f = 100 MHz (Figure)  
= 10 V, f = 100 MHz (Figure)  
⎯
18  
2.5  
Noise figure  
NF  
⎯
3.5  
Note: I  
classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA  
DSS  
1
2007-11-01  
123456

中文翻译

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