生命周期: | Obsolete | 包装说明: | SC-59, TO-236MOD, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2009_07 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
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2SK2009TE85R | TOSHIBA |
获取价格 |
TRANSISTOR 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose |
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2SK2010 | SANYO |
获取价格 |
Very High-Speed Switching Applications |
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2SK2011 | SANYO |
获取价格 |
Very High-Speed Switching Applications |
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2SK2012 | SANYO |
获取价格 |
Very High-Speed Switching Applications |
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2SK2013 | TOSHIBA |
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N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
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2SK2013_06 | TOSHIBA |
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N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
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2SK2013_09 | TOSHIBA |
获取价格 |
Audio Frequency Power Amplifier Application |
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2SK2013O | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
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2SK2013-O | TOSHIBA |
获取价格 |
暂无描述 |
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