生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | 其他特性: | AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 60 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 115 ns | 最大开启时间(吨): | 45 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2030 | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2030LBTE16L | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose | |
2SK2030LBTE16R | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose | |
2SK2030TE16L | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2030TE16R | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK2032 | ETC |
获取价格 |
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2SK2033 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) | |
2SK2033 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK2033 | TYSEMI |
获取价格 |
High input impedance. Low gate threshold voltage :Vth=0.5 to 1.5V Enhancement-Mode | |
2SK2033(F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,100MA I(D),SC-59 |