Datasheet > 2SK2013_09

2SK2013_09

更新时间： 2024-09-25 07:32:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	265K
描述
Audio Frequency Power Amplifier Application

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中文翻译

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数据手册

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2SK2013_09 数据手册

2SK2013

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2013

Audio Frequency Power Amplifier Application

Unit: mm

z High breakdown voltage

: V

= 180V

DSS

z High forward transfer admittance

z Complementary to 2SJ313

: |Y | = 0.7 S (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

180

DSS

Gate−source voltage

±20

GSS

Drain current

(Note 2)

Drain power dissipation (Tc = 25°C)

Channel temperature

°C

stg

150

Storage temperature range

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

JEDEC

JEITA

―

SC−67

2-10R1B

TOSHIBA

Marking

Weight: 1.9 g (typ.)

Note 1: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product. The

RoHS is the Directive 2002/95/EC of the European Parliament and of the

Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

Part No.

(or abbreviation code)

K2013

Lot No.

Note 1

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

= 0, V = ±20 V

Min

Typ.

Max

Unit

—

180

1.8

—

±100

—

GSS

= 10 mA, V

Drain−source breakdown voltage

Gate−source cut−off voltage (Note 3)

Drain−source saturation voltage

Forward transfer admittance

Input capacitance

= 0

(BR) DSS

GS (OFF)

= 10 V, I = 10 mA

—

2.8

3.0

—

= 0.6 A, V

= 10 V

1.7

0.7

170

DS (ON)

|Y |

= 10 V, I = 0.3 A

—

= 10 V, V

≈ 10 V, V

= 0, f = 1 MHz

—

iss

Output capacitance

—

oss

Reverse transfer capacitance

—

rss

Note 2: Ensure that the channel temperature does not exceed 150°C.

Note 3: Classification O: 0.8~1.6, Y: 1.4~2.8

GS (OFF)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4

中文翻译

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与2SK2013_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2013O	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 180V V(BR)DSS \| 1A I(D) \| SC-67
2SK2013-O	TOSHIBA	获取价格	暂无描述
2SK2013Y	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 180V V(BR)DSS \| 1A I(D) \| SC-67
2SK2013-Y	TOSHIBA	获取价格	暂无描述
2SK2018	FUJI	获取价格	N-channel MOS-FET
2SK2018-01	FUJI	获取价格	N-channel MOS-FET
2SK2018-01L	FUJI	获取价格	N-channel MOS-FET
2SK2018-01S	FUJI	获取价格	N-channel MOS-FET
2SK2019-01	FUJI	获取价格	N-channel MOS-FET
2SK2020-01MR	FUJI	获取价格	N-channel MOS-FET

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