Datasheet > 2SK2009(T5L,PP,F)

2SK2009(T5L,PP,F)

更新时间： 2023-01-02 14:36:12

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	273K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2SK2009

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2009

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

High input impedance.

Low gate threshold voltage: V = 0.5 to 1.5 V

Excellent switching times: t = 0.06 μs (typ.)

off

= 0.12 μs (typ.)

•

Low drain-source ON resistance: R

= 1.2 Ω (typ.)

DS (ON)

Small package

Enhancement-mode

Marking

Equivalent Circuit

JEDEC

JEITA

TO-236MOD

SC-59

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

2-3F1F

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Weight: 0.012 g (typ.)

±20

Gate-source voltage

DC drain current

GSS

200

°C

Drain power dissipation

Channel temperature

Storage temperature range

200

stg

150

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device. Please handle with caution.

Start of commercial production

1992-04

2014-03-01

12 3 4 5

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