2SK1621S

更新时间： 2024-11-12 06:19:47

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
3页	19K
描述
Silicon N-Channel MOS FET

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中文翻译

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数据手册

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2SK1621S 数据手册

2SK1621 L , 2SK1621 S

Silicon N-Channel MOS FET

Application

LDPAK

High speed power switching

Features

• Low on-resistance

• High speed switching

2, 4

• Low drive current

S type

1. Gate

2. Drain

3. Source

4. Drain

L type

• No secondary breakdown

• Suitable for switching regulator, DC-DC

converter and motor driver

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

250

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

D(pulse)

———————————————————————————————————————————

Body to drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at T = 25 °C

12 3

中文翻译

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与2SK1621S相关器件

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2SK1622	HITACHI	获取价格	Silicon N-Channel MOS FET
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2SK1622(S)	RENESAS	获取价格	Power Field-Effect Transistor, 0.06ohm, N-Channel, Metal-oxide Semiconductor FET
2SK1622(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta
2SK1622(S)TL	RENESAS	获取价格	25A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1622(S)TR	RENESAS	获取价格	25A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1622L	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1622S	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1623	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1623	RENESAS	获取价格	Silicon N Channel MOS FET