Datasheet > 晶体管 > 功率场效应晶体管> 2SK1622(S)TL

2SK1622(S)TL

更新时间： 2024-09-24 13:00:31

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
3页	20K
描述
Power Field-Effect Transistor, 25A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK1622(S)TL 数据手册

2SK1622 L , 2SK1622 S

Silicon N-Channel MOS FET

Application

LDPAK

High speed power switching

Features

• Low on-resistance

• High speed switching

2, 4

• Low drive current

• 4 V gate drive device

– Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter,

power switch and solenoid drive

S type

1. Gate

2. Drain

3. Source

4. Drain

L type

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

100

D(pulse)

———————————————————————————————————————————

Body to drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at T = 25 °C

12 3

中文翻译

下载PDF

与2SK1622(S)TL相关器件

型号	品牌	获取价格	描述	数据表
2SK1622(S)TR	RENESAS	获取价格	25A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1622L	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1622S	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1623	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1623	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1623(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| TO-262AA
2SK1623(L)\|2SK1623(S)	ETC	获取价格
2SK1623(S)	RENESAS	获取价格	0.12ohm, POWER, FET, LDPAK-3
2SK1623(S)TL	RENESAS	获取价格	暂无描述
2SK1623(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met