生命周期: | Obsolete | 包装说明: | LDPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.67 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.15 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1620STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1621(L) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-262AA | |
2SK1621(S) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB | |
2SK1621L | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1621S | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1622 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1622(L) | RENESAS |
获取价格 |
Power Field-Effect Transistor, 0.06ohm, N-Channel, Metal-oxide Semiconductor FET | |
2SK1622(S) | RENESAS |
获取价格 |
Power Field-Effect Transistor, 0.06ohm, N-Channel, Metal-oxide Semiconductor FET | |
2SK1622(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1622(S)TL | RENESAS |
获取价格 |
25A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET |