生命周期: | Obsolete | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.29 |
最大漏源导通电阻: | 0.15 Ω | JESD-30 代码: | R-PSSO-G2 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1620(S)-(1) | HITACHI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK1620(S)-(2) | HITACHI |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK1620(S)TL | RENESAS |
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暂无描述 | |
2SK1620(S)TR | RENESAS |
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暂无描述 | |
2SK1620L | HITACHI |
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Silicon N-Channel MOS FET | |
2SK1620L | RENESAS |
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Silicon N Channel MOS FET | |
2SK1620L-E | RENESAS |
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Silicon N Channel MOS FET | |
2SK1620S | RENESAS |
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Silicon N Channel MOS FET | |
2SK1620S | HITACHI |
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Silicon N-Channel MOS FET | |
2SK1620STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET |