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2SK1398 PDF预览

2SK1398

更新时间: 2024-11-27 22:45:07
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日电电子 - NEC 开关
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8页 54K
描述
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

2SK1398 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK1398  
N-CHANNEL MOS FET  
FOR HIGH SPEED SWITCHING  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK1398 is N-channel MOS Field Effect Transistor  
designed for a high-speed switching device in digital circuits.  
The 2SK1398 is driven by a 2.5-V power source, it is  
suitable for applications including headphone stereos  
which need power saving.  
PART NUMBER  
2SK1398  
PACKAGE  
SST  
FEATURES  
Directly driven by ICs having a 3-V power supply.  
Not necessary to consider driving current because of its high input impedance.  
Possible to reduce the number of parts by omitting the bias resistor.  
Can be used complementary with the 2SJ184.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
50  
±7.0  
V
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
D(DC)  
Drain Current (DC)  
I
±100  
mA  
mA  
mW  
°C  
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
D(pulse)  
I
±200  
T
P
250  
ch  
T
150  
stg  
T
–55 to +150  
°C  
Note PW 10 ms, Duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14772EJ2V0DS00 (2nd edition)  
(Previous No. TC-2342)  
Date Published March 2000 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1991, 2000  
©

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