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2SK1399 PDF预览

2SK1399

更新时间： 2024-11-27 22:45:07
品牌 Logo 应用领域
日电电子 - NEC 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
8页 48K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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中文翻译

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2SK1399 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：SC-59包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.2配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：50 V最大漏极电流 (ID)：0.1 A
最大漏源导通电阻：40 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK1399 数据手册

 浏览型号2SK1399的Datasheet PDF文件第2页浏览型号2SK1399的Datasheet PDF文件第3页浏览型号2SK1399的Datasheet PDF文件第4页浏览型号2SK1399的Datasheet PDF文件第5页浏览型号2SK1399的Datasheet PDF文件第6页浏览型号2SK1399的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK1399  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR HIGH SPEED SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK1399 is an N-channel vertical type MOS FET which can be  
driven by 2.5-V power supply.  
2.8 ± 0.2  
+0.1  
The 2SK1399 is driven by low voltage and does not require consideration  
of driving current, it is suitable for appliances including VCR cameras and  
headphone stereos which need power saving.  
1.5  
0.65  
–0.15  
2
1
FEATURES  
3
• Can be driven by a 3.0-V power source  
• Not necessary to consider driving current because of it is high input  
impedance  
Marking  
• Possible to reduce the number of parts by omitting the bias resistor  
• Can be used complementary with the 2SJ185  
ORDERING INFORMATION  
PART NUMBER  
2SK1399  
PACKAGE  
SC-59 (Mini Mold)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
Operating Temperature  
Storage Temperature  
V
V
50  
±7.0  
V
V
Drain  
Electrode  
GSS  
★
Connection  
1.Source  
2.Gate  
D(DC)  
I
±100  
mA  
mA  
mW  
°C  
Internal  
Diode  
D(pulse)  
I
±200  
Gate  
3.Drain  
T
P
200  
Gate  
Protection  
Diode  
ch  
T
150  
Source  
opt  
T
–55 to +80  
°C  
Marking: G12  
stg  
T
–55 to +150 °C  
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14770EJ2V0DS00 (2nd edition)  
(Previous No.TC-2343)  
The mark ★ shows major revised points.  
1991, 2000  
©
Date Published March 2000 NS CP(K)  
Printed in Japan  
12345678

中文翻译

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2SK1399 替代型号

型号 品牌 替代类型 描述 数据表
2SK1133-A RENESAS

功能相似

 100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN

与2SK1399相关器件

型号 品牌 获取价格 描述 数据表
2SK1399-A RENESAS

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 		100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-59, 3 PIN
2SK1399-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SK1399-T1B NEC

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 		Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK1399-T2B NEC

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 		Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK1399-T2B RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SK1399-T2B-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SK1400 RENESAS

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 		Silicon N Channel MOS FET
2SK1400 HITACHI

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 		Silicon N-Channel MOS FET
2SK1400|2SK1400A ETC

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2SK1400A HITACHI

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 		Silicon N-Channel MOS FET

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