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2SK1399-A

更新时间： 2024-11-28 14:51:03
品牌 Logo 应用领域
瑞萨 - RENESAS 开关光电二极管晶体管
页数 文件大小 规格书
8页 46K
描述
100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-59, 3 PIN

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中文翻译

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2SK1399-A 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：SC-59包装说明：PLASTIC, SC-59, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.2Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：0.1 A最大漏极电流 (ID)：0.1 A
最大漏源导通电阻：40 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e6
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：80 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Bismuth (Sn98Bi2)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK1399-A 数据手册

 浏览型号2SK1399-A的Datasheet PDF文件第2页浏览型号2SK1399-A的Datasheet PDF文件第3页浏览型号2SK1399-A的Datasheet PDF文件第4页浏览型号2SK1399-A的Datasheet PDF文件第5页浏览型号2SK1399-A的Datasheet PDF文件第6页浏览型号2SK1399-A的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK1399  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR HIGH SPEED SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK1399 is an N-channel vertical type MOS FET which can be  
driven by 2.5-V power supply.  
2.8 ± 0.2  
+0.1  
The 2SK1399 is driven by low voltage and does not require consideration  
of driving current, it is suitable for appliances including VCR cameras and  
headphone stereos which need power saving.  
1.5  
0.65  
–0.15  
2
1
FEATURES  
3
• Can be driven by a 3.0-V power source  
• Not necessary to consider driving current because of it is high input  
impedance  
Marking  
• Possible to reduce the number of parts by omitting the bias resistor  
• Can be used complementary with the 2SJ185  
ORDERING INFORMATION  
PART NUMBER  
2SK1399  
PACKAGE  
SC-59 (Mini Mold)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
Operating Temperature  
Storage Temperature  
V
V
50  
±7.0  
V
V
Drain  
Electrode  
GSS  
★
Connection  
1.Source  
2.Gate  
D(DC)  
I
±100  
mA  
mA  
mW  
°C  
Internal  
Diode  
D(pulse)  
I
±200  
Gate  
3.Drain  
T
P
200  
Gate  
Protection  
Diode  
ch  
T
150  
Source  
opt  
T
–55 to +80  
°C  
Marking: G12  
stg  
T
–55 to +150 °C  
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14770EJ2V0DS00 (2nd edition)  
(Previous No.TC-2343)  
The mark ★ shows major revised points.  
1991, 2000  
©
Date Published March 2000 NS CP(K)  
Printed in Japan  
12345678

中文翻译

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2SK1399-T1B NEC

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2SK1399-T2B-AT RENESAS

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 		TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
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2SK1400|2SK1400A ETC

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