Datasheet > 2SK1399-T2B

2SK1399-T2B

更新时间： 2024-11-28 14:49:51

品牌	Logo	应用领域
日电电子 - NEC		开关光电二极管晶体管
页数	文件大小	规格书
8页	48K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN

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技术参数
数据手册

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2SK1399-T2B 技术参数

生命周期：	Obsolete	零件包装代码：	SC-59
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.67
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	50 V
最大漏极电流 (ID)：	0.1 A	最大漏源导通电阻：	40 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK1399-T2B 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK1399

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SK1399 is an N-channel vertical type MOS FET which can be

driven by 2.5-V power supply.

2.8 ± 0.2

+0.1

The 2SK1399 is driven by low voltage and does not require consideration

of driving current, it is suitable for appliances including VCR cameras and

headphone stereos which need power saving.

1.5

0.65

–0.15

FEATURES

• Can be driven by a 3.0-V power source

• Not necessary to consider driving current because of it is high input

impedance

Marking

• Possible to reduce the number of parts by omitting the bias resistor

• Can be used complementary with the 2SJ185

ORDERING INFORMATION

PART NUMBER

2SK1399

PACKAGE

SC-59 (Mini Mold)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

EQUIVALENT CIRCUIT

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

Operating Temperature

Storage Temperature

±7.0

Drain

Electrode

GSS

★

Connection

1.Source

2.Gate

D(DC)

±100

°C

Internal

Diode

D(pulse)

±200

Gate

3.Drain

200

Gate

Protection

Diode

150

Source

opt

–55 to +80

°C

Marking: G12

stg

–55 to +150 °C

Note PW ≤ 10 ms, Duty Cycle ≤ 50 %

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14770EJ2V0DS00 (2nd edition)

(Previous No.TC-2343)

The mark ★ shows major revised points.

1991, 2000

Date Published March 2000 NS CP(K)

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与2SK1399-T2B相关器件

型号	品牌	获取价格	描述	数据表
2SK1399-T2B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SK1400	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1400	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1400\|2SK1400A	ETC	获取价格
2SK1400A	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1400A	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1400A_10	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK1400A-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1400-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1401	HITACHI	获取价格	Silicon N-Channel MOS FET

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