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2SK1381_04 PDF预览

2SK1381_04

更新时间: 2024-11-28 04:26:23
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器转换器继电器晶体管场效应晶体管电机
页数 文件大小 规格书
6页 453K
描述
Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

2SK1381_04 数据手册

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2SK1381  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)  
2SK1381  
Relay Drive, Motor Drive and DCDC Converter  
Applications  
Unit: mm  
4-V gate drive  
Low drainsource ON resistance  
High forward transfer admittance  
: R  
= 25 m(typ.)  
DS (ON)  
: |Y | = 33 S (typ.)  
fs  
Low leakage current  
Enhancement mode  
: I  
= 100 μA (max) (V  
= 100 V)  
DSS  
DS  
: V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drainsource voltage  
V
100  
100  
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
±20  
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
50  
1. GATE  
D
Drain current  
A
2. DRAIN (HEAT SINK)  
3. SOURCE  
I
200  
DP  
Drain power dissipation (Tc = 25°C)  
Channel temperature  
P
150  
W
°C  
°C  
D
ch  
stg  
T
150  
JEDEC  
JEITA  
Storage temperature range  
T
55~150  
TOSHIBA  
2-16C1B  
Thermal Characteristics  
Weight: 4.6 g (typ.)  
Characteristics  
Symbol  
Max  
0.833  
50  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2004-07-06  

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