Datasheet > 2SK1382_06

2SK1382_06

更新时间： 2024-11-28 04:26:23

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器开关继电器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	749K
描述
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS)

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数据手册

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2SK1382_06 数据手册

2SK1382

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSIII)

2SK1382

Relay Drive, Motor Drive and DC−DC Converter

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 15 mΩ (typ.)

DS (ON)

: |Y | = 47 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 100 V)

DSS

: V = 0.8~2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

100

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

DC (Note 1)

Pulse (Note 1)

JEDEC

JEITA

―

Drain current

240

Drain power dissipation (Tc = 25°C)

Channel temperature

200

°C

stg

TOSHIBA

2-21F1B

150

Weight: 9.75 g (typ.)

Storage temperature range

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.625

35.7

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-20

12 3 4 5 6

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