生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 1.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1378 | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
2SK1379 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1380 | TOSHIBA |
获取价格 |
TRANSISTOR 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, TO-3PL, 3 PIN, FET | |
2SK1381 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHNG, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPL | |
2SK1381_04 | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Moto | |
2SK1382 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APP | |
2SK1382_06 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APP | |
2SK1382_09 | TOSHIBA |
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Relay Drive, Motor Drive and DC−DC Converter Applications | |
2SK1384 | ETC |
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N-CHANNEL ENHANCEMENT TYPE MOS-FET | |
2SK1384R | ETC |
获取价格 |
N-CHANNEL ENHANCEMENT TYPE MOS-FET |