2SK1298

更新时间： 2024-11-21 06:25:43

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2SK1298 数据手册

2SK1298

Silicon N Channel MOS FET

REJ03G0918-0200

(Previous: ADE-208-1256)

Rev.2.00

Sep 07, 2005

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

4 V gate drive device

Can be driven from 5 V source

•

Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1. Gate

2. Drain

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK1298-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1299	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1299(L)	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta
2SK1299(L)	RENESAS	获取价格	3A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SK1299(L)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK1299(L)\|2SK1299(S)	ETC	获取价格
2SK1299(S)	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta
2SK1299(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK1299(S)-(2)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3A I(D),TO-252VAR
2SK1299(S)-(3)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET