生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1299(S)-(3) | HITACHI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK1299(S)TL | HITACHI | 暂无描述 |
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2SK1299(S)TL | RENESAS | 3A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK1299(S)TR | RENESAS | 3A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET |
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2SK12996 | TOSHIBA | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
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2SK1299L | HITACHI | Silicon N-Channel MOS FET |
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