生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 20 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1299(L)|2SK1299(S) | ETC |
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2SK1299(S) | HITACHI | Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta |
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2SK1299(S)-(1) | HITACHI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK1299(S)-(2) | HITACHI | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3A I(D),TO-252VAR |
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2SK1299(S)-(3) | HITACHI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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2SK1299(S)TL | HITACHI | 暂无描述 |
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